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| 2SA1797 Power Transistor (-50V, -3A) Features 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797. Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Symbol VCBO VCEO VEBO IC Limits -50 -50 -6 Unit V V V A (DC) A (Pulse) -3 -5 0.5 2 *2 1 *3 150 -55~ 150 * 1 2SA1797 PC Tj Tstg W Junction temperature Storage temperature *1 Single pulse, Pw=10ms *2 When mounted on a 40x 40x 0.7mm ceramic board. *3 Printed circuit board 1.7mm thick, collector plating 1c SOT-89 or larger. Packaging specifications and hFE 2SA1797 SOT-89 PQ hFE Marking AG Code T100 Basic ordering unit (Pieces) 1000 *Denotes hF E 1:EMITTER 2:COLLECTOR 3:BASE Type Package Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance *Measured using pulse current 2SA1797 Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob 82 200 36 -0.15 Min. -50 -50 -6 -0.1 -0.1 -0.35 270 MHz pF Typ. Max. Unit V V V A A V IC IC IE -50uA -1 Conditions mA -50V -5V -1A/-50mA -2V/-0.5A -50uA VCB VEB IC/IB * * VCE/IC VCE VCB -2V, IE 0.5A, f 100MHz IE 0A, f -10V, 1MHz 1 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics 150 Fig.2 Derating curve of safe operating areas 12 Fig.3 Power Derating -Ic,Collector current(A) 1.6 - Ic Derating(%) 1.2 100 Power Dissipation(W) 150 200 -IB=9mA -IB=8MA -IB=7mA -IB=6mA -IB=5mA S/ 8 b lim 0.8 ite d io at ip ss Di -IB=4mA -IB=3mA 0.4 50 4 n lim -IB=2mA -IB=1mA 0 0 4 8 12 16 20 ite d 0 0 -50 0 50 100 -50 0 50 100 150 200 -Collector-Emitter voltage(V) Tc,Case Temperature(C) Tc,Case Temperature(C) Fig.4 Collector Output capacitance 3 10 Fig.5 Current gainbandwidth product 3 10 1 10 Fig.6 Safe operating area Ic(max),Pulse 10 S 1m 0. Output Capacitance(pF) FT(MHz), Current gainbandwidth product 2 10 IE=0 f=1MHz VCE=5V 2 10 -Ic,Collector current(A) Ic(max),DC mS 1m S 10 0 IB=8mA 1 10 1 10 -1 10 0 10 10 0 -1 10 -2 10 -3 10 0 10 -2 10 -1 10 10 0 1 10 -2 10 10 0 1 10 2 10 -Collector-Base Voltage(v) Ic,Collector current(A) Collector-Emitter Voltage Fig.7 DC current gain 3 10 4 10 Fig.8 Saturation Voltage VCE=-2V -Saturation Voltage(mV) DC current Gain,H FE 3 10 VBE(sat) 2 10 2 10 1 10 VCE(sat) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 0 10 0 10 1 10 2 10 3 10 4 10 -Ic,Collector current(mA) -Ic,Collector current(mA) 2 |
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